6–18 GHz GaAs pHEMT Broadband Power Amplifier Based on Dual-Frequency Selective Impedance Matching Technique
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چکیده
منابع مشابه
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© 2009 Sang-Woong Yoon et al. 601 ABSTRACT⎯This letter presents a high performance 2.4 GHz two-stage power amplifier (PA) operating in the temperature range from -30C to +85C for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero-junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vecto...
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2019
ISSN: 2169-3536
DOI: 10.1109/access.2019.2917699